Products Description
Our high-efficiency RF power amplifier deliver outstanding performance across wide frequency ranges, from 10 MHz to 4 GHz. Featuring high gain, internal matching, and excellent power-added efficiency (up to 61.5%), these amplifiers provide saturated output powers from 10 W to 50 W, depending on the model. Compact package designs ensure easy integration, high reliability, and low external component requirements. Ideal for pulse or continuous wave applications, including radar, public mobile radio communications, and general amplification modules, they excel in complex environments such as satellite communications, electronic warfare, and specialized rescue operations.
Products Specification
|
|
BRGF035012FWJ |
BRGF010010FLJ |
BRGF021050PJG |
|
Frequency |
2.5GHz ~ 4GHz |
10MHz ~ 1GHz |
1.9GHz～2.2GHz |
|
Gain |
9.8dB@3.7GHz |
20.8dB@500MHz |
16.1dB@2GHz |
|
Psat |
41.9dBm@3.7GHz |
40.3dBm@500MHz |
48dBm@2GHz |
|
PAE |
50.4%@3.7GHz |
59.9%(500MHz) |
61.5%@2GHz |
|
Supply current |
VDD=28V, 130mA |
VDD=28V, static current 70mA |
VDD=28V, static current 300mA |
|
Package |
QFN24(5mm×5mm) |
QFN32 (5mm×5mm) |
PJ |
Products Parameter
BRGF035012FWJ
|
Typical Performance (EVB test data,2.5GHz ~ 4GHz) |
||||||||||
|
Parameters |
Typ. |
Unit |
||||||||
|
Frequency |
2500 |
2700 |
2900 |
3100 |
3300 |
3500 |
3700 |
3900 |
4000 |
MHz |
|
Gain |
25.8 |
26.2 |
26.1 |
26.3 |
27.2 |
28.8 |
29.8 |
28.5 |
26.9 |
dB |
|
Input return loss |
-14.5 |
-14.9 |
-16.9 |
-17.7 |
-14.9 |
-12.0 |
-13.0 |
-16.1 |
-13.4 |
dB |
|
Output return loss |
-7.2 |
-9.0 |
-10.7 |
-11.3 |
-10.5 |
-8.9 |
-8.2 |
-10.4 |
-12.1 |
dB |
|
Saturated pout ( dBm ) |
42.0 |
41.7 |
41.4 |
41.3 |
42.0 |
42.1 |
41.9 |
41.2 |
41.2 |
dBm |
|
PAE@Psat |
52.9 |
52.5 |
49.6 |
47.5 |
48.4 |
49.8 |
50.4 |
53.4 |
53.7 |
% |
|
Test condition: Temp =+25℃, VDD=+28V, IDQ=130mA; Psat&PAEwas pulse test, pulse width was 100us, duty cycle was 10%, IDQ=6mA Note: Psat defined as the saturation power output of the evaluation board. |
||||||||||
BRGF010010FLJ
|
Typical Performanc (EVB test data,0.01GHz ~ 1GHz) |
||||||||||
|
Parameters |
Typ. |
Units |
||||||||
|
Frequency |
10 |
30 |
100 |
300 |
400 |
500 |
600 |
800 |
1000 |
MHz |
|
Gain |
21.32 |
21.16 |
21.20 |
21.02 |
20.92 |
20.80 |
20.87 |
20.95 |
20.15 |
dB |
|
Input return loss |
-12.50 |
-15.27 |
-16.06 |
-14.97 |
-13.43 |
-11.85 |
-10.77 |
-12.58 |
-20.97 |
dB |
|
Output return loss |
-14.95 |
-20.95 |
-21.23 |
-17.49 |
-16.40 |
-15.56 |
-14.71 |
-15.61 |
-10.35 |
dB |
|
Drain current @Psat |
546 |
457 |
472 |
521 |
544 |
616 |
712 |
778 |
590 |
mA |
|
Pout ( dBm ) @Psat |
39.60 |
39.42 |
39.66 |
39.94 |
40.15 |
40.26 |
40.94 |
41.81 |
40.47 |
dBm |
|
PAE@Psat |
57.01 |
65.61 |
67.58 |
65.35 |
65.99 |
59.85 |
60.00 |
67.54 |
65.33 |
% |
|
Power gain@Psat |
13.53 |
13.92 |
14.66 |
14.76 |
15.38 |
15.58 |
14.37 |
15.21 |
15.02 |
dB |
|
Test condition: Temp =+25 ° C, VDD=+28V, IDQ=70mA Note: Psat defined as the saturation power output of the evaluation board; |
||||||||||
BRGF021050PJG
|
Evaluation Board Test Data (1.9 GHz–2.2 GHz) |
||||||||
|
Parameters |
Typ. |
Units |
||||||
|
Frequency |
1900 |
1950 |
2000 |
2050 |
2100 |
2150 |
2200 |
MHz |
|
Gain |
15.7 |
16.0 |
16.1 |
16.2 |
16.5 |
16.4 |
16.3 |
dB |
|
Input return loss |
-5.0 |
-5.4 |
-5.7 |
-6.1 |
-6.6 |
-6.9 |
-7.4 |
dB |
|
Output return loss |
3.74 |
3.77 |
3.45 |
3.25 |
3.87 |
3.53 |
3.82 |
A |
|
Drain current @Psat |
48.3 |
48.3 |
48.0 |
48.0 |
48.5 |
48.1 |
48.4 |
dBm |
|
Pout ( dBm ) @Psat |
12.6 |
12.7 |
12.5 |
12.1 |
12.7 |
12.7 |
13.9 |
dB |
|
PAE@Psat |
60.88 |
60.53 |
61.55 |
64.98 |
61.82 |
61.82 |
62.06 |
% |
|
Test condition: Temp =+25 °, VDD =+28V, =70mA=300mA,CW test; Note: Psat defined as the saturation power output of the evaluation board. |
||||||||
Products Description
High Output Power
Provides 10 W to 50 W saturated output, meeting various power requirements.
01
Wideband Operation
Supports 10 MHz–4 GHz wide frequency range, compatible with diverse systems.
02
High Gain and Flatness
High small-signal gain with in-band flatness up to ±0.5 dB.
03
High Power-Added Efficiency
Power-added efficiency up to 61.5%, energy-saving and efficient.
04
Internal Matching Design
Simplifies system integration with minimal external components.
05
Products Application
Service
|
Service and Support |
||
|
We provide customers with comprehensive professional services, including consultation, implementation, training, and technical support, and offer customized solutions tailored to different application scenarios to meet diverse customer needs |
||
|
|
|
|
|
Product Selection We provide optimal product selection schemes based on specific customer application requirements |
Technical Consulting We supply technical data such as product specifications, test data, and other technical materials required by customers |
Professional Team Our team consists of professional R&D personnel and a complete technical support system, delivering systematic solutions |
|
Technical Support · Rapid response and efficient delivery · Product selection guidance · Provision of systematic solutions · Free sample trial offer |
||
FAQ
Q: Do these amplifiers require external matching components?
A:No, internal matching design minimizes the need for external components.
Q: What packaging options are available?
A: The high-efficiency RF power amplifiers are available in standard small-size packages or bare die options can be provided upon request.
Q: Can these amplifiers be used in pulsed wave applications?
A: Yes, both amplifiers are suitable for pulsed wave and continuous wave applications.
Q: What applications benefit from the wide bandwidth of these amplifiers?
A: Common applications include radar, mobile radio, satellite communications, electronic warfare, and specialized rescue operations.
Q: Does the product support free samples or trial shipping?
A: Yes, we provide free samples and trial units upon request to qualified customers.
Q: What is the MOQ?
A: The MOQ is 10 pieces, making it convenient for small-batch testing and applications.
Q: Power amplifier products recommend a static operating voltage Vgs and quiescent current Idq, but why is there a deviation between the actual static data of the received product and the typical values in the product manual, and how is it applied in practice?
A: 1.Process variation is the most fundamental reason for the deviation in static gate voltage. During semiconductor wafer manufacturing, although the process is strictly controlled, subtle differences still exist in microscopic parameters such as material doping concentration, epitaxial layer thickness, gate length, and gate width.
2.Process variation leads to threshold voltage (Vth) differences of several tens of millivolts even between two adjacent chips on the same wafer. Since Vgs and Idq are determined by Vth (for FETs, Idq ∝ (Vgs - Vth)²), a minor change in Vth can cause significant fluctuations in Idq. The static gate bias range of our company's products is < ±500 mV, and the design should reserve flexibility for adjusting the gate voltage during application.
3.As voltage-controlled current devices, the quiescent current of GaN HEMT devices is one of the most critical indicators for determining their operating state. In practical applications, it is necessary to adjust the gate voltage to ensure the device's quiescent current reaches the recommended value.
Hot Tags: high efficiency rf power amplifier, China high efficiency rf power amplifier manufacturers, suppliers, factory, rf line amplifier, solid state rf amplifier, high power amplifier rf, rf lna amplifier, low noise rf amplifier, high frequency power amplifier
